Method of carrier profiling utilizing dielectric relaxation

Abstract

A mode-locked laser injects pulses of minority carriers into a semiconductor sample. A microwave frequency comb is then generated by the currents formed in the movement of majority carriers native to the semiconductor and the injected minority carriers. These carriers move to cause dielectric relaxation in the sample, which can be used to determine carrier density within the sample. Measurements require close proximity of transmitter and receiver contacts with the sample and may profile a semi-conductor with a resolution of approximately 0.2 nm.

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