Method for significant reduction of dislocations for a very high A1 composition A1GaN layer
Patent ID:
US-7776636-B2
Published:
August 2010
Category:
Other
Abstract
A method for reducing dislocation density between an AlGaN layer and a sapphire substrate involving the step of forming a self-organizing porous AlN layer of non-coalescing column-like islands with flat tops on the substrate.
Patent Details
Image Pages:
6
External Resources
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